Highly Robust 130 nm SiGe BiCMOS Power Limiter, LNA and Mixer IC for a Wideband 1.5 - 18 GHz MIMO Radar Receiver
Publikation: Beitrag in Buch/Konferenzbericht/Sammelband/Gutachten › Beitrag in Konferenzband › Beigetragen › Begutachtung
Beitragende
Abstract
This work presents a highly robust 1.5 - 18 GHz high dynamic range power limiter, low noise amplifier (LNA) and mixer IC. A novel power limiter design concept is introduced, which stands out for its low capacitive behavior. The circuit withstands input power levels up to 25 dBm while demonstrating a good noise matching up to 18 GHz. The design approach features a distributed fully differential LNA and a double balanced common base input mixer to enhance the linearity and the wideband performance. The active power limiter, LNA and mixer IC was fabricated on a 130 nm SiGe BiCMOS technology, it draws a total of 62 mA from a 3 V DC power supply and the active IC area is 0.65 mm.
Details
Originalsprache | Englisch |
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Titel | 2019 IEEE MTT-S International Microwave Symposium, IMS 2019 |
Herausgeber (Verlag) | Institute of Electrical and Electronics Engineers Inc. |
Seiten | 1007-1010 |
Seitenumfang | 4 |
ISBN (elektronisch) | 9781728113098 |
Publikationsstatus | Veröffentlicht - Juni 2019 |
Peer-Review-Status | Ja |
Publikationsreihe
Reihe | IEEE MTT-S International Microwave Symposium Digest |
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Band | 2019-June |
ISSN | 0149-645X |
Konferenz
Titel | 2019 IEEE MTT-S International Microwave Symposium, IMS 2019 |
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Dauer | 2 - 7 Juni 2019 |
Stadt | Boston |
Land | USA/Vereinigte Staaten |
Schlagworte
ASJC Scopus Sachgebiete
Schlagwörter
- BiCMOS integrated circuits, differential amplifiers, linearization techniques, low-noise amplifiers, mixers