Highly Robust 130 nm SiGe BiCMOS Power Limiter, LNA and Mixer IC for a Wideband 1.5 - 18 GHz MIMO Radar Receiver

Publikation: Beitrag in Buch/Konferenzbericht/Sammelband/GutachtenBeitrag in KonferenzbandBeigetragenBegutachtung

Abstract

This work presents a highly robust 1.5 - 18 GHz high dynamic range power limiter, low noise amplifier (LNA) and mixer IC. A novel power limiter design concept is introduced, which stands out for its low capacitive behavior. The circuit withstands input power levels up to 25 dBm while demonstrating a good noise matching up to 18 GHz. The design approach features a distributed fully differential LNA and a double balanced common base input mixer to enhance the linearity and the wideband performance. The active power limiter, LNA and mixer IC was fabricated on a 130 nm SiGe BiCMOS technology, it draws a total of 62 mA from a 3 V DC power supply and the active IC area is 0.65 mm.

Details

OriginalspracheEnglisch
Titel2019 IEEE MTT-S International Microwave Symposium, IMS 2019
Herausgeber (Verlag)Institute of Electrical and Electronics Engineers Inc.
Seiten1007-1010
Seitenumfang4
ISBN (elektronisch)9781728113098
PublikationsstatusVeröffentlicht - Juni 2019
Peer-Review-StatusJa

Publikationsreihe

ReiheIEEE MTT-S International Microwave Symposium Digest
Band2019-June
ISSN0149-645X

Konferenz

Titel2019 IEEE MTT-S International Microwave Symposium, IMS 2019
Dauer2 - 7 Juni 2019
StadtBoston
LandUSA/Vereinigte Staaten

Schlagworte

Schlagwörter

  • BiCMOS integrated circuits, differential amplifiers, linearization techniques, low-noise amplifiers, mixers