High gain amplifiers in flexible self-aligned a-IGZO thin-film-transistor technology

Publikation: Beitrag in Buch/Konferenzbericht/Sammelband/GutachtenBeitrag in KonferenzbandBeigetragenBegutachtung

Beitragende

Abstract

To our knowledge, this paper presents the first high-gain amplifiers fabricated in flexible self-aligned amorphous indium gallium zinc oxide (a-IGZO) thin-film-transistor (TFT) technology. For the common source amplifier applying positive feedback a voltage gain of 17 dB, a bandwidth of 79 kHz and a DC power of only 0.76 mW were measured. For the cascode amplifier a voltage gain of 25 dB voltage gain, a bandwidth of 220 kHz and a DC power of 2.32 mW were measured. The simulations based on a RPI-aTFT model are compared with measurements. The chip areas are 8 and 10 mm2, respectively.

Details

OriginalspracheEnglisch
Titel21st IEEE International Conference on Electronics, Circuits and Systems (ICECS) 2014
Herausgeber (Verlag)IEEE
Seiten108-111
Seitenumfang4
ISBN (Print)978-1-4799-4242-8
PublikationsstatusVeröffentlicht - 10 Dez. 2014
Peer-Review-StatusJa

Konferenz

Titel2014 21st IEEE International Conference on Electronics, Circuits and Systems (ICECS)
Dauer7 - 10 Dezember 2014
OrtMarseille, France

Externe IDs

ORCID /0000-0001-6429-0105/work/142236606
ORCID /0000-0002-4230-8228/work/142251419
Scopus 84925443389
ORCID /0000-0002-4152-1203/work/165453377

Schlagworte

Forschungsprofillinien der TU Dresden

Schlagwörter

  • Gain, Thin film transistors, Voltage measurement, Gain measurement, Semiconductor device measurement, Bandwidth