High gain amplifiers in flexible self-aligned a-IGZO thin-film-transistor technology
Publikation: Beitrag in Buch/Konferenzbericht/Sammelband/Gutachten › Beitrag in Konferenzband › Beigetragen › Begutachtung
Beitragende
Abstract
To our knowledge, this paper presents the first high-gain amplifiers fabricated in flexible self-aligned amorphous indium gallium zinc oxide (a-IGZO) thin-film-transistor (TFT) technology. For the common source amplifier applying positive feedback a voltage gain of 17 dB, a bandwidth of 79 kHz and a DC power of only 0.76 mW were measured. For the cascode amplifier a voltage gain of 25 dB voltage gain, a bandwidth of 220 kHz and a DC power of 2.32 mW were measured. The simulations based on a RPI-aTFT model are compared with measurements. The chip areas are 8 and 10 mm2, respectively.
Details
| Originalsprache | Englisch |
|---|---|
| Titel | 21st IEEE International Conference on Electronics, Circuits and Systems (ICECS) 2014 |
| Herausgeber (Verlag) | IEEE |
| Seiten | 108-111 |
| Seitenumfang | 4 |
| ISBN (Print) | 978-1-4799-4242-8 |
| Publikationsstatus | Veröffentlicht - 10 Dez. 2014 |
| Peer-Review-Status | Ja |
Konferenz
| Titel | 2014 21st IEEE International Conference on Electronics, Circuits and Systems (ICECS) |
|---|---|
| Dauer | 7 - 10 Dezember 2014 |
| Ort | Marseille, France |
Externe IDs
| ORCID | /0000-0001-6429-0105/work/142236606 |
|---|---|
| ORCID | /0000-0002-4230-8228/work/142251419 |
| Scopus | 84925443389 |
| ORCID | /0000-0002-4152-1203/work/165453377 |
Schlagworte
Forschungsprofillinien der TU Dresden
Schlagwörter
- Gain, Thin film transistors, Voltage measurement, Gain measurement, Semiconductor device measurement, Bandwidth