Hafnium oxide based CMOS compatible ferroelectric materials

Publikation: Beitrag in FachzeitschriftForschungsartikelBeigetragenBegutachtung

Beitragende

  • U. Schroeder - , NaMLab - Nanoelectronic materials laboratory gGmbH (Autor:in)
  • S. Mueller - , NaMLab - Nanoelectronic materials laboratory gGmbH (Autor:in)
  • J. Mueller - , Fraunhofer-Institut für Elektronische Nanosysteme (Autor:in)
  • E. Yurchuk - , NaMLab - Nanoelectronic materials laboratory gGmbH (Autor:in)
  • D. Martin - , NaMLab - Nanoelectronic materials laboratory gGmbH (Autor:in)
  • C. Adelmann - , Interuniversitair Micro-Elektronica Centrum (Autor:in)
  • T. Schloesser - , Global Foundries, Inc. (Autor:in)
  • R. Van Bentum - , Global Foundries, Inc. (Autor:in)
  • T. Mikolajick - , Professur für Nanoelektronik, NaMLab - Nanoelectronic materials laboratory gGmbH (Autor:in)

Abstract

The ferroelectric behavior of capacitors based on hafnium oxide dielectrics will be reported. Thin films of 7-30 nm thickness were found to exhibit ferroelectric polarization-voltage hysteresis loops when integrated into TiN-based metal-insulator-metal capacitors. A remanent polarization up to 25 μC/cm2 and a high coercive field of about 1 MV/cm was observed. Doping of HfO2 by different dopants with an atomic radius ranging from 110 pm (Si) to 188 pm (Gd) was evaluated and in all cases ferroelectric behavior was verified by polarization-voltage hysteresis, small signal capacitance-voltage characteristics, and for Si as a dopant also by piezoelectric measurements. Polarization retention and endurance was characterized on capacitor and transistor structures.

Details

OriginalspracheEnglisch
AufsatznummerN69
FachzeitschriftECS Journal of Solid State Science and Technology
Jahrgang2
Ausgabenummer4
PublikationsstatusVeröffentlicht - 2013
Peer-Review-StatusJa

Externe IDs

ORCID /0000-0003-3814-0378/work/142256311