Ferroelectric materials offer the promise to realize low power memory devices and show negative capacitance operation that could lead to novel electronic devices. Although intense research on realizing different memory device concepts based on three different readout schemes have been subject to intense research, the commercial success is limited to low density ferroelectric random access memories based on a direct capacitor readout. The complexity of integrating ferroelectric materials into CMOS processes has limited successful implementations. Ferroelectricity in hafnium oxide related material systems could overcome this limitations for memories and at the same time enable new devices based on negative capacitance.