Germanium-based polarity-controllable transistors

Publikation: Beitrag in Buch/Konferenzbericht/Sammelband/GutachtenBeitrag in Buch/Sammelband/GutachtenBeigetragenBegutachtung



In this book chapter the authors show device metric predictions as determined by device simulations and present experimental demonstrator results in terms of fabrication and electrical characterization, respectively. Measurements and simulations show that in comparison to Si RFETs, the supply voltage can be reduced by a factor of 2 and dynamic power consumption can be ~4 times lower compared to silicon-based RFETs. In addition, on-currents can be boosted by up to a factor of 10 without degradation of capacitances, bringing a benefit in the intrinsic delay. Performance and power consumption metrics were extracted for different device geometries and benchmarked with modern conventional devices. The authors show that scaled Ge RFETs are competitive compared to modern low standby and low operating power technologies. The performance boosting at the device level combined with the circuit capabilities of RFETs holds the promise of enabling new circuit applications.


TitelFunctionality-Enhanced Devices An alternative to Moore’s Law
Herausgeber (Verlag)Institution of Engineering and Technology
ISBN (elektronisch)9781785615580
PublikationsstatusVeröffentlicht - 1 Jan. 2018

Externe IDs

ORCID /0000-0003-3814-0378/work/142256269


ASJC Scopus Sachgebiete


  • Capacitance, Device simulations, Dynamic power consumption, Electrical characterization, Elemental semiconductors, Fabrication, Ge, Germanium, Germanium-based polarity-controllable transistors, Insulated gate field effect transistors, Intrinsic delay, Low operating power technologies, Low-power electronics, MOSFET, Power consumption, Reconfigurable transistors, Scaled Ge RFETs, Semiconductor device measurement, Semiconductor device modelling, equivalent circuits, design and testing, Semiconductor device models, Supply voltage