Fieldemitter-based ESD-protection circuits for high-frequency devices and IC's
Publikation: Beitrag in Fachzeitschrift › Forschungsartikel › Beigetragen › Begutachtung
Beitragende
Abstract
Based on investigations to find the thresholds of the ESD voltage inducing degradations to GaAs Schottky diodes and MESFETS, we have developed and fabricated new ESD protection structures based on electron field emission. Using these GaAs electron field-emitter wedges we have designed and fabricated protection circuits integrated in GaAs microwave devices to prevent the devices from degradation caused by ESD.
Details
Originalsprache | Englisch |
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Seiten (von - bis) | 263-279 |
Seitenumfang | 17 |
Fachzeitschrift | Journal of Electrostatics |
Jahrgang | 31 |
Ausgabenummer | 2-3 |
Publikationsstatus | Veröffentlicht - Dez. 1993 |
Peer-Review-Status | Ja |
Extern publiziert | Ja |
Externe IDs
ORCID | /0000-0002-0757-3325/work/139064994 |
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