Wurtzite-structured ferroelectrics, such as aluminum scandium nitride (Al_1-xSc_xN), are among the most promising candidates for implementing innovative nonvolatile memory concepts into commercial technologies. However, the opposite state (OS) retention limits the long-term retention performances. Since verifying the retention requirement directly up to 10 years, as typically targeted by commercial technologies, is timely unfeasible, developing a model to predict the 10-year OS retention performances of wurtzite-structured ferroelectrics is of the utmost importance for validating their reliable long-term operation. This work demonstrates the imprint as the primary factor in determining the Al_1-xSc_xN OS retention performances. A model to predict the 10-year OS retention performances of Al_1-xSc_xN is developed by directly correlating the coercive field (E_c) increase with the slowing down of the switching dynamics through the relationship between the characteristic switching time and applied electric field magnitude to E_c ratio (E/E_c). The model is verified with OS retention measurements performed on Al_0.85Sc_0.15N capacitors after baking for up to 2 weeks at 150 °C. The E/E_c that guarantees reliable 10-year OS retention performances is extrapolated for pulse widths down to the nanosecond range. Finally, electric field switching cycling is proven as a viable strategy for recovering from the imprint that degrades OS retention performances.