Fabrication of field-effect transistors from hexathiapentacene single-crystal nanowires

Publikation: Beitrag in FachzeitschriftForschungsartikelBeigetragenBegutachtung

Beitragende

  • Alejandro L. Briseno - , University of Washington (Autor:in)
  • Stefan C.B. Mannsfeld - , Stanford University (Autor:in)
  • Xianmao Lu - , University of Washington (Autor:in)
  • Yujie Xiong - , University of Washington (Autor:in)
  • Samson A. Jenekhe - , University of Washington (Autor:in)
  • Zhenan Bao - , Stanford University (Autor:in)
  • Younan Xia - , University of Washington (Autor:in)

Abstract

This paper describes a simple, solution-phase route to the synthesis of bulk quantities of hexathiapentacene (HTP) single-crystal nanowires. These nanowires have also been successfully incorporated as the semiconducting material in field-effect transistors (FETs). For devices based on single nanowires, the carrier mobilities and current on/off ratios could be as high as 0.27 cm2/Vs and >103, respectively. For transistors fabricated from a network of nanowires, the mobilities and current on/off ratios could reach 0.057 cmWs and >104, respectively. We have further demonstrated the use of nanowire networks in fabricating transistors on mechanically flexible substrates. Preliminary results show that these devices could withstand mechanical strain and still remain functional. The results from this study demonstrate the potential of utilizing solution-dispersible, nanostructured organic materials for use in low-cost, flexible electronic applications.

Details

OriginalspracheEnglisch
Seiten (von - bis)668-675
Seitenumfang8
FachzeitschriftNano letters
Jahrgang7
Ausgabenummer3
PublikationsstatusVeröffentlicht - März 2007
Peer-Review-StatusJa
Extern publiziertJa