Enhanced Mobility of Spin-Helical Dirac Fermions in Disordered 3D Topological Insulators
Publikation: Beitrag in Fachzeitschrift › Forschungsartikel › Beigetragen › Begutachtung
Beitragende
Abstract
The transport length ltr and the mean free path le are determined for bulk and surface states in a Bi2Se3 nanoribbon by quantum transport and transconductance measurements. We show that the anisotropic scattering of spin-helical Dirac fermions results in a strong enhancement of ltr (≈ 200 nm) and of the related mobility μtr (≈ 4000 cm2 V-1 s-1), which confirms theoretical predictions.1 Despite strong disorder, the long-range nature of the scattering potential gives a large ratio ltr/le ≈ 8, likely limited by bulk/surface coupling. This suggests that the spin-flip length lsf ≈ ltr could reach the micron size in materials with a reduced bulk doping and paves the way for building functionalized spintronic and ballistic electronic devices out of disordered 3D topological insulators.
Details
Originalsprache | Englisch |
---|---|
Seiten (von - bis) | 6733-6737 |
Seitenumfang | 5 |
Fachzeitschrift | Nano letters |
Jahrgang | 16 |
Ausgabenummer | 11 |
Publikationsstatus | Veröffentlicht - 9 Nov. 2016 |
Peer-Review-Status | Ja |
Schlagworte
ASJC Scopus Sachgebiete
Schlagwörter
- anisotropic scattering, chemical vapor transport nanostructures, gate effect, quantum transport, Topological insulators