Edge of chaos in memristor CNN with hysteresis and applications in pattern formation
Publikation: Beitrag in Buch/Konferenzbericht/Sammelband/Gutachten › Beitrag in Konferenzband › Beigetragen › Begutachtung
Beitragende
Abstract
In this paper we shall study a class of memristor CNN with hysteresis. We shall investigate the dynamics of this model via local activity theory and we shall determine the edge of chaos region in which complex phenomena can be exhibited. Applications of the memristor CNN with hysteresis model in pattern formation will be presented. Nonuniform spatial patterns generation will be derived which is due the memristor polarity, stimulations and initial conditions.
Details
| Originalsprache | Englisch |
|---|---|
| Titel | 2021 IEEE International Symposium on Circuits and Systems, ISCAS 2021 - Proceedings |
| Herausgeber (Verlag) | Institute of Electrical and Electronics Engineers (IEEE) |
| ISBN (elektronisch) | 9781728192017 |
| Publikationsstatus | Veröffentlicht - 2021 |
| Peer-Review-Status | Ja |
Publikationsreihe
| Reihe | Proceedings - IEEE International Symposium on Circuits and Systems |
|---|---|
| Band | 2021-May |
| ISSN | 0271-4310 |
Konferenz
| Titel | IEEE International Symposium on Circuits and Systems 2021 |
|---|---|
| Untertitel | Smart Technology for an Intelligent Society |
| Kurztitel | ISCAS 2021 |
| Veranstaltungsnummer | 53 |
| Dauer | 22 - 28 Mai 2021 |
| Stadt | Daegu |
| Land | Südkorea |
Externe IDs
| ORCID | /0000-0001-7436-0103/work/172081493 |
|---|
Schlagworte
ASJC Scopus Sachgebiete
Schlagwörter
- Edge of chaos, Hysteresis, Memristor CNN, Pattern formation