Edge of chaos in memristor CNN with hysteresis and applications in pattern formation

Publikation: Beitrag in Buch/Konferenzbericht/Sammelband/GutachtenBeitrag in KonferenzbandBeigetragenBegutachtung

Beitragende

Abstract

In this paper we shall study a class of memristor CNN with hysteresis. We shall investigate the dynamics of this model via local activity theory and we shall determine the edge of chaos region in which complex phenomena can be exhibited. Applications of the memristor CNN with hysteresis model in pattern formation will be presented. Nonuniform spatial patterns generation will be derived which is due the memristor polarity, stimulations and initial conditions.

Details

OriginalspracheEnglisch
Titel2021 IEEE International Symposium on Circuits and Systems, ISCAS 2021 - Proceedings
Herausgeber (Verlag)Institute of Electrical and Electronics Engineers (IEEE)
ISBN (elektronisch)9781728192017
PublikationsstatusVeröffentlicht - 2021
Peer-Review-StatusJa

Publikationsreihe

ReiheProceedings - IEEE International Symposium on Circuits and Systems
Band2021-May
ISSN0271-4310

Konferenz

TitelIEEE International Symposium on Circuits and Systems 2021
UntertitelSmart Technology for an Intelligent Society
KurztitelISCAS 2021
Veranstaltungsnummer53
Dauer22 - 28 Mai 2021
StadtDaegu
LandSüdkorea

Externe IDs

ORCID /0000-0001-7436-0103/work/172081493

Schlagworte

ASJC Scopus Sachgebiete

Schlagwörter

  • Edge of chaos, Hysteresis, Memristor CNN, Pattern formation