The invention relates to doped perovskites and their use as active and/or charge transport layers in optoelectronic devices and the manufacturing of an optoelectronic device. The optoelectronic device is arranged on a substrate comprising a first electrode (2) adjacent to the substrate (3) and a second electrode (7) which is arranged on top of the device and at least one layer comprising an perovskite structure which is arranged between the first and the second electrode (2, 7), and wherein the perovskite is doped from 0.001 to 30 wt.-% with a n-type or p-type dopant material based on the total weight of the finished layer or layered in combination with charge-transport materials that are doped from 0.001 to 30 wt.-% with a n-type or p-type dopant material based on the total weight of the finished layer.