Organic photodiodes (OPDs) offer a myriad of advantages over conventional inorganic photodetectors, making them particularly attractive for imaging application. One of the key challenges preventing their utilization is the need for their integration into the standard CMOS processing. Herein, we report a CMOS-compatible top-illuminated inverted small molecule bi-layer OPD with extremely low dark leakage current. The device utilizes a titanium nitride (TiN) bottom electrode modified by a [6,6]-phenyl C₆₁ butyric acid methyl ester (PCBM) cathode buffer layer (CBL). We systemetically show that doping the CBL enhances device's low voltage (below 1 V reverse bias) photoresponse by increasing the linear dynamic range (LDR) and making the bandwidth of the photodidoe broader without compromising the leakage current. The optimized device exhibits a dark leakage current of only ∼6 × 10⁻¹⁰ A/cm² at −0.5 V. The external quantum efficiency (EQE) at 500 nm reaches 23% with a calculated specific detectivity as high as 7.15 × 10¹² cm Hz^1/2/W (Jones). Also the LDR approaches 140 dB and the bandwidth is about 400 kHz, at −0.5 V bias. The proposed device structure is fully compatible with CMOS processing and can be integrated onto a CMOS readout circuit offering the potential to be applied in high-performance large-scale imaging arrays.