Dielectric Engineering of Electronic Correlations in a van der Waals Heterostructure
Publikation: Beitrag in Fachzeitschrift › Forschungsartikel › Beigetragen › Begutachtung
Beitragende
Abstract
Heterostructures of van der Waals bonded layered materials offer unique means to tailor dielectric screening with atomic-layer precision, opening a fertile field of fundamental research. The optical analyses used so far have relied on interband spectroscopy. Here we demonstrate how a capping layer of hexagonal boron nitride (hBN) renormalizes the internal structure of excitons in a WSe2 monolayer using intraband transitions. Ultrabroadband terahertz probes sensitively map out the full complex-valued mid-infrared conductivity of the heterostructure after optical injection of 1s A excitons. This approach allows us to trace the energies and line widths of the atom-like 1s-2p transition of optically bright and dark excitons as well as the densities of these quasiparticles. The excitonic resonance red shifts and narrows in the WSe2/hBN heterostructure compared to the bare monolayer. Furthermore, the ultrafast temporal evolution of the mid-infrared response function evidences the formation of optically dark excitons from an initial bright population. Our results provide key insight into the effect of nonlocal screening on electron-hole correlations and open new possibilities of dielectric engineering of van der Waals heterostructures.
Details
Originalsprache | Englisch |
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Seiten (von - bis) | 1402-1409 |
Seitenumfang | 8 |
Fachzeitschrift | Nano letters |
Jahrgang | 18 |
Ausgabenummer | 2 |
Publikationsstatus | Veröffentlicht - 14 Feb. 2018 |
Peer-Review-Status | Ja |
Extern publiziert | Ja |
Externe IDs
PubMed | 29365262 |
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Schlagworte
ASJC Scopus Sachgebiete
Schlagwörter
- atomically thin 2D crystals, dark excitons, Dichalcogenides, dielectric engineering, van der Waals heterostructures