The silicidation process, used for the fabrication of contacts in MOSFETs, has met some challenges, when transferred to SiGe channel material. In this paper, the formation of germano-silicides in SiGe nano-channels is investigated. A wide range of temperatures were tested and both pure Ni and Ni₉₀Ti₁₀ alloy were used as the diffusive metal. A repeatable process flow was established, with which a long intruded germano-silicide of around 350 nm with little to no imperfections can be achieved. A nanochannel with (NiTi)(SiGe)/SiGe junctions was gated to form an ambipo-lar transistor with clear n- and p-branches in its transfer characteristics.