Crystal growth, characterization and electronic band structure of TiSeS

Publikation: Beitrag in FachzeitschriftForschungsartikelBeigetragenBegutachtung

Beitragende

  • Y. Shemerliuk - , Professur für Experimentelle Festkörperphysik (gB/IFW), Leibniz Institute for Solid State and Materials Research Dresden (Autor:in)
  • A. Kuibarov - , Professur für Experimentelle Festkörperphysik (gB/IFW), Leibniz Institute for Solid State and Materials Research Dresden (Autor:in)
  • O. Feia - , Leibniz Institute for Solid State and Materials Research Dresden, Kyiv Academic University (Autor:in)
  • M. Behnami - , Professur für Experimentelle Festkörperphysik (gB/IFW), Leibniz Institute for Solid State and Materials Research Dresden (Autor:in)
  • H. Reichlova - , Institut für Festkörper- und Materialphysik, Leibniz Institute for Solid State and Materials Research Dresden (Autor:in)
  • O. Suvorov - , Leibniz Institute for Solid State and Materials Research Dresden, NASU - Kurdyumov Institute for Metal Physics (Autor:in)
  • S. Selter - , Leibniz Institute for Solid State and Materials Research Dresden (Autor:in)
  • D. V. Efremov - , Leibniz Institute for Solid State and Materials Research Dresden (Autor:in)
  • S. Borisenko - , Leibniz Institute for Solid State and Materials Research Dresden (Autor:in)
  • B. Büchner - , Professur für Experimentelle Festkörperphysik (gB/IFW), Leibniz Institute for Solid State and Materials Research Dresden (Autor:in)
  • S. Aswartham - , Leibniz Institute for Solid State and Materials Research Dresden (Autor:in)

Abstract

Layered semimetallic van der Waals material TiSe2 has attracted a lot of attention because of interplay of a charge density wave (CDW) state and superconductivity. Its sister compound TiS2, being isovalent to TiSe2 and having the same crystal structure, shows a semiconducting behavior. The natural question rises - what happens at the transition point in TiSe2-xSx, which is expected for x close to one. Here we report the growth and characterization of TiSeS single crystals and the study of the electronic structure using density functional theory (DFT) and angle-resolved photoemission (ARPES). We show that TiSeS single crystals have the same morphology as TiSe2. Transport measurements reveal a metallic state; no evidence of CDW was found. DFT calculations suggest that the electronic band structure in TiSeS is similar to that of TiSe2, but the electron and hole pockets in TiSeS are much smaller. The ARPES results are in good agreement with the calculations.

Details

OriginalspracheEnglisch
Aufsatznummer033405
FachzeitschriftPhysical review materials
Jahrgang7
Ausgabenummer3
PublikationsstatusVeröffentlicht - März 2023
Peer-Review-StatusJa