In this work, the low frequency noise (LFN) of low-voltage organic field-effect transistors (OFETs) with solution-sheared gate dielectrics is investigated. Thin film transistors (TFTs) are fabricated using two different gate oxide processing techniques — thermal annealing and deep ultraviolet (DUV) photoactivation — to intentionally vary the concentration of Al–OH groups at the dielectric surface. Through systematic electrical measurements, we observe that the drain current’s normalized power spectral density (nPSD) follows a (Formula presented) dependence with α ≈ 1.9, consistent with the carrier number fluctuation model for flicker noise. Furthermore, devices with higher Al–OH content, particularly those processed with DUV activation, exhibit an order of magnitude increased nPSD levels despite their enhanced mobility. A strong correlation is observed between Al–OH concentration and LFN levels, highlighting that optimizing the metal oxide network composition for high mobility may impact negatively the noise performance.