Correlating elemental compositions and charge carrier profiles in ultra-pure GaN/AlGaN stacks grown by molecular beam epitaxy

Publikation: Beitrag in FachzeitschriftForschungsartikelBeigetragenBegutachtung

Beitragende

  • Stefan Schmult - , Professur für Nanoelektronik (Autor:in)
  • Pascal Appelt - , Technische Universität Dresden, NaMLab - Nanoelectronic materials laboratory gGmbH (Autor:in)
  • Claudia Silva - , NaMLab - Nanoelectronic materials laboratory gGmbH (Autor:in)
  • Steffen Wirth - , Max-Planck-Institut für Chemische Physik fester Stoffe (Autor:in)
  • Andre Wachowiak - , NaMLab - Nanoelectronic materials laboratory gGmbH (Autor:in)
  • Andreas Großer - , NaMLab - Nanoelectronic materials laboratory gGmbH (Autor:in)
  • Thomas Mikolajick - , Professur für Nanoelektronik, NaMLab - Nanoelectronic materials laboratory gGmbH (Autor:in)

Abstract

Inconsistencies in the concentrations of unintentional donor impurities and free charge carriers in GaN/AlGaN layer stacks hosting a two-dimensional electron gas (2DEG) can be attributed to the measurement procedure and solely depend on the way in which the free charge carrier concentration is extracted. Particularly, when the 2DEG acts as the bottom electrode in capacitance versus voltage measurements, unphysically low concentrations of free charges are calculated. This originates from the depletion of the 2DEG and the accompanying disappearance of the bottom electrode. It is shown that, for the case of a defined (non-vanishing) bottom electrode, the levels of donor impurities and resulting free charges consistently match.

Details

OriginalspracheEnglisch
Aufsatznummer042702
Seitenumfang5
Fachzeitschrift Journal of vacuum science & technology : JVST ; A, Vacuum, surfaces, and films
Jahrgang41
Ausgabenummer4
PublikationsstatusVeröffentlicht - 1 Juli 2023
Peer-Review-StatusJa

Externe IDs

WOS 000987889100001
ORCID /0000-0003-3814-0378/work/142256362

Schlagworte

Fächergruppen, Lehr- und Forschungsbereiche, Fachgebiete nach Destatis

Schlagwörter

  • Electron-mobility transistors, Gan

Bibliotheksschlagworte