Controlling morphology: A vertical organic transistor with a self-structured permeable base using the bottom electrode as seed layer
Publikation: Beitrag in Fachzeitschrift › Forschungsartikel › Beigetragen › Begutachtung
Beitragende
Abstract
Flexible organic permeable base transistors are a promising transistor technology, enabling high transconductance without the need for cost-intensive structuring techniques. Here, we present a simple approach to enhance the transmission and thus the current gain of a permeable base transistor. By adding a morphology modifying gold layer beneath the organic semiconductor, the interface to the base electrode is adjusted, resulting in a self-structured permeable base. Furthermore, we show that doping is essential not only for charge injection at the emitter, but is also required at the collector for a good performance. We show that the transmission can be increased to 98% by tuning the built-in field at the collector to actively gather charge carriers. The built-in field also leads to a very low minimum operation voltage < 0.5 V, resulting in a low power consumption.
Details
Originalsprache | Englisch |
---|---|
Aufsatznummer | 956805 |
Fachzeitschrift | Applied physics letters |
Jahrgang | 107 |
Ausgabenummer | 3 |
Publikationsstatus | Veröffentlicht - 20 Juli 2015 |
Peer-Review-Status | Ja |
Externe IDs
Scopus | 84937789153 |
---|