The newly developed press-pack IGBT devices compete with IGCTs in high power industrial applications. These new semiconductors were already studied in detail for hard switching [1] and for clamp operation [2]. Nevertheless, a comparison of the basic switching characteristics of the IGBT press-pack devices for hard switching and clamp operation has not been done so far. This paper compares the switching behavior, the switching losses and the safe operating area trajectories of the new 85 mm, 4.5 kV, 1.2 kA press-pack SPT⁺ IGBT for hard switching and clamp operation. The methods used for the experimental characterization and comparison are explained in detail.