This work presents an integrated low noise amplifier (LNA), based on an ac-coupled 7-stage common-emitter topology. An analysis on the basic transistor configurations is performed, to show the advantages of a common emitter chain for LNA designs. The circuit is intended for ultra-wideband wireless communication systems at 180 GHz (G-band) and offers a measured gain of 19 dB. The bandwidth of over 80 GHz is one of the highest reported. The simulated noise figure is 7.1 dB at 180 GHz and the group delay variation is below 7 ps. The input referred 1-dB compression point occurs above-30 dBm, while the total dc power consumption is 42 mW. The final chip occupies an area of 0.55 mm² and is implemented in a 130 nm SiGe BiCMOS process, which offers a maximum oscillation frequency f_max of 450 GHz.