Bandgap engineering of Cd(x)Zn(1-x)Te nanowires
Publikation: Beitrag in Fachzeitschrift › Forschungsartikel › Beigetragen › Begutachtung
Beitragende
Abstract
Bandgap engineering of single-crystalline alloy Cd(x)Zn(1-x)Te (0 ≤ x ≤ 1) nanowires is achieved successfully through control of growth temperature and a two zone source system in a vapor-liquid-solid process. Extensive characterization using electron microscopy, Raman spectroscopy and photoluminescence shows highly crystalline alloy nanowires with precise tuning of the bandgap. It is well known that bulk Cd(x)Zn(1-x)Te is popular for construction of radiation detectors and availability of a nanowire form of this material would help to improve detection sensitivity and miniaturization. This is a step forward towards the accomplishment of tunable and predetermined bandgap emissions for various applications.
Details
Originalsprache | Englisch |
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Seiten (von - bis) | 932-935 |
Seitenumfang | 4 |
Fachzeitschrift | Nanoscale |
Jahrgang | 5 |
Ausgabenummer | 3 |
Publikationsstatus | Veröffentlicht - 7 Feb. 2013 |
Peer-Review-Status | Ja |
Externe IDs
Scopus | 84872692831 |
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Schlagworte
Schlagwörter
- Cadmium Compounds/chemical synthesis, Crystallization/methods, Macromolecular Substances/chemistry, Materials Testing, Molecular Conformation, Nanostructures/chemistry, Particle Size, Surface Properties, Tellurium, Temperature, Zinc/chemistry