An important step in the fabrication of many modern semiconductor materials and devices is the crystal growth process. These processes take place in high-temperature furnaces using inert gas and other atmospheres. The flow in the gas phase influences the transport of crystal components, dopants and impurities and hence has a significant impact on the grown crystals. In this work, we study the flow in a simplified model of a crystal growth furnace. This model is made of PMMA filled with a Diesel mixture as a model fluid to match the refractive index of PMMA and to allow for measurements in the complex geometry. The comparability to the flow in a real furnace is ensured by matching the Reynolds number. Two optical measurement methods, Particle Image Velocimetry (PIV) and the Laser Doppler Velocity Profile Sensor (LDV-PS) are used to investigate the global flow field as well as the small-scale flow structures. A calibration model is developed for the LDV-PS to reduce systematic measurement errors caused by the refractive index of the model fluid from up to 1% to less than 0,1%. The results obtained in this study improve the understanding of the gas flow behavior inside a crystal growth furnace and provide reference data for simulation. The first analysis shows a highly unsteady flow with unexpected flow direction along the crystal and melt surfaces. The near-surface flow patterns are of particular relevance in crystal growth because of their large influence on the local heat and mass transport during the crystallization process.