Analytical Investigation of Pattern Formation in an M-CNN with Locally Active NbOx Memristors
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Beitragende
Abstract
This paper presents the analytical investigation of complex pattern formation in a Memristor Cellular Nonlinear Network (M-CNN) by applying the theory of local activity. The proposed M-CNN has the conventional two dimensional (2D) planar structure, where all the memristive cells are identical and resistively coupled to each other. The single cell is composed of a suitable combination of a DC voltage source, a bias resistor, a locally active NbOx memristor, and a capacitor. The locally active memristor has a simplified generic form, enhancing the simulation speed, and a functional AC equivalent circuit, facilitating further inspections. The stability analysis of the single cell is followed by the extraction of the parameters of the local activity, edge-of-chaos, and sharp-edge-of-chaos domains. Simulation results demonstrate that pattern formation can emerge in a dissipatively coupled M-CNN with locally active memristors.
Details
Originalsprache | Englisch |
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Titel | 2021 IEEE International Symposium on Circuits and Systems (ISCAS) |
Herausgeber (Verlag) | IEEE Xplore |
Seitenumfang | 5 |
ISBN (Print) | 978-1-7281-9201-7 |
Publikationsstatus | Veröffentlicht - 2021 |
Peer-Review-Status | Ja |
Publikationsreihe
Reihe | IEEE International Symposium on Circuits and Systems (ISCAS) |
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ISSN | 0271-4302 |
Externe IDs
ORCID | /0000-0002-1236-1300/work/142239540 |
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ORCID | /0000-0001-7436-0103/work/142240277 |
Scopus | 85105421880 |