A Transistor Model for a-IGZO TFT Circuit Design Built upon the RPI-aTFT Model
Publikation: Beitrag in Buch/Konferenzbericht/Sammelband/Gutachten › Beitrag in Konferenzband › Beigetragen › Begutachtung
Beitragende
Abstract
This paper presents a compact transistor model for circuit design in a flexible amorphous indium gallium zinc oxide (a-IGZO) thin-film transistor (TFT) technology. The presented model is technology specific and builds upon the Verilog-A Rensselaer Polytechnic Institute amorphous silicon TFT (RPI-aTFT) model. On the basis of extensive device characterization, we introduce appropriate new equations and parameters that enable an accurate and efficient behavioral representation of a-IGZO TFTs. In this work, we address the modelling of short channel effects, the scalability for channel lengths from 5 µm to 50 µm, as well as the presence of process variation. Using this model, a Cherry-Hooper amplifier is designed, analyzed, implemented in a flexible a-IGZO TFT technology, and characterized. Finally, to validate the presented transistor model, we compare circuit simulations and measurements of the Cherry-Hooper amplifier circuit. The amplifier provides a voltage gain of 9.5 dB and has a GBW of 7.2 MHz from a supply voltage of 6 V. The simulation using our new compact transistor model resembles the measured characteristics very well. It predicts a voltage gain of 10.4 dB and a GBW of 7.0 MHz.
Details
Originalsprache | Englisch |
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Titel | 15th IEEE International New Circuits and Systems Conference (NEWCAS) 2017 |
Seiten | 129-132 |
Seitenumfang | 4 |
Publikationsstatus | Veröffentlicht - Juni 2017 |
Peer-Review-Status | Ja |
Konferenz
Titel | 15th IEEE International New Circuits and Systems Conference |
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Kurztitel | NEWCAS 2017 |
Veranstaltungsnummer | 15 |
Dauer | 25 - 28 Juni 2017 |
Ort | Hilton Hotel |
Stadt | Strasbourg |
Land | Frankreich |
Externe IDs
ORCID | /0000-0001-6429-0105/work/129851035 |
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Scopus | 85034446768 |
ORCID | /0000-0002-4230-8228/work/142251410 |
ORCID | /0000-0002-4152-1203/work/165453367 |
Schlagworte
Forschungsprofillinien der TU Dresden
Schlagwörter
- A Transistor Model for a-IGZO TFT Circuit Design Built upon the RPI-aTFT Model