The present disclosure relates to a method for producing an organic field effect transistor, the method comprising steps of providing a gate electrode (1) and a gate insulator (2) assigned to the gate electrode (1) for electrical insulation on a substrate, depositing a first organic semiconducting layer (3) on the gate insulator (2), generating a first electrode (4) and an electrode insulator (5) assigned to the first electrode (4) for electrical insulation, depositing a second organic semiconducting layer (6) on the first organic semiconducting layer (3) and the electrode insulator (5), and generating a second electrode (7), wherein the method further comprises at least one of the following steps generating a first doping material layer (13) on the first organic semiconducting layer (3) prior to generating the first electrode (4) and the electrode insulator (5) such that the first electrode (4) with the electrode insulator (5) are generated at least partially on the first doping material layer (13), and generating a second doping material layer (14) on the second organic semiconducting layer (6) prior to generating the second electrode (7) such that the second electrode (7) is generated at least partially on the second doping material layer (14). Furthermore, an organic field effect transistor is provided.