A method for producing an organic field effect transistor and an organic field effect transistor
Publikation: Geistiges Eigentum › Patentanmeldung/Patent
Beitragende
- Technische Universität Dresden
- Novaled GmbH
- 诺弗雷德有限公司
Abstract
A method for producing an organic field effect transistor is disclosed, the method comprising steps of providing a gate electrode (1) and a gate insulator (2) assigned to the gate electrode (1) for electrical insulation on a substrate, depositing a first organic semiconducting layer (3) on the gate insulator (2), generating a first electrode (4) and an electrode insulator (5) assigned to the first electrode (4) for electrical insulation on the first organic semiconducting layer (3), depositing a second organic semiconducting layer (6) on the first organic semiconducting layer (3) and the electrode insulator (5), and generating a second electrode (7) on the second organic semiconducting layer (6), wherein at least one of the step of generating the first electrode (4) and the electrode insulator (5) on the first organic semiconducting layer (3) and the step of generating the second electrode (7) on the second organic semiconducting layer (6) comprises a step of photo-lithographic structuring on the first and the second organic semiconducting layer (3, 6), respectively. Furthermore, an organic field effect transistor and an electronic switching device are provided.
Details
A method for producing an organic field effect transistor is disclosed, the method comprising steps of providing a gate electrode (1) and a gate insulator (2) assigned to the gate electrode (1) for electrical insulation on a substrate, depositing a first organic semiconducting layer (3) on the gate insulator (2), generating a first electrode (4) and an electrode insulator (5) assigned to the first electrode (4) for electrical insulation on the first organic semiconducting layer (3), depositing a second organic semiconducting layer (6) on the first organic semiconducting layer (3) and the electrode insulator (5), and generating a second electrode (7) on the second organic semiconducting layer (6), wherein at least one of the step of generating the first electrode (4) and the electrode insulator (5) on the first organic semiconducting layer (3) and the step of generating the second electrode (7) on the second organic semiconducting layer (6) comprises a step of photo-lithographic structuring on the first and the second organic semiconducting layer (3, 6), respectively. Furthermore, an organic field effect transistor and an electronic switching device are provided.
Originalsprache | Englisch |
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IPC (Internationale Patentklassifikation) | H01L 51/ 10 A I |
Veröffentlichungsnummer | CN104396041 |
Land/Gebiet | Deutschland |
Prioritätsdatum | 28 März 2013 |
Prioritätsnummer | WO2013EP56738 |
Publikationsstatus | Veröffentlicht - 4 März 2015 |
Externe IDs
ORCID | /0000-0002-9773-6676/work/142659831 |
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