A method for producing an organic field effect transistor and an organic field effect transistor

Publikation: Geistiges EigentumPatentanmeldung/Patent

Beitragende

Abstract

A method for producing an organic field effect transistor is disclosed, the method comprising steps of providing a gate electrode (1) and a gate insulator (2) assigned to the gate electrode (1) for electrical insulation on a substrate, depositing a first organic semiconducting layer (3) on the gate insulator (2), generating a first electrode (4) and an electrode insulator (5) assigned to the first electrode (4) for electrical insulation on the first organic semiconducting layer (3), depositing a second organic semiconducting layer (6) on the first organic semiconducting layer (3) and the electrode insulator (5), and generating a second electrode (7) on the second organic semiconducting layer (6), wherein at least one of the step of generating the first electrode (4) and the electrode insulator (5) on the first organic semiconducting layer (3) and the step of generating the second electrode (7) on the second organic semiconducting layer (6) comprises a step of photo-lithographic structuring on the first and the second organic semiconducting layer (3, 6), respectively. Furthermore, an organic field effect transistor and an electronic switching device are provided.

Details

A method for producing an organic field effect transistor is disclosed, the method comprising steps of providing a gate electrode (1) and a gate insulator (2) assigned to the gate electrode (1) for electrical insulation on a substrate, depositing a first organic semiconducting layer (3) on the gate insulator (2), generating a first electrode (4) and an electrode insulator (5) assigned to the first electrode (4) for electrical insulation on the first organic semiconducting layer (3), depositing a second organic semiconducting layer (6) on the first organic semiconducting layer (3) and the electrode insulator (5), and generating a second electrode (7) on the second organic semiconducting layer (6), wherein at least one of the step of generating the first electrode (4) and the electrode insulator (5) on the first organic semiconducting layer (3) and the step of generating the second electrode (7) on the second organic semiconducting layer (6) comprises a step of photo-lithographic structuring on the first and the second organic semiconducting layer (3, 6), respectively. Furthermore, an organic field effect transistor and an electronic switching device are provided.

OriginalspracheEnglisch
IPC (Internationale Patentklassifikation)H01L 51/ 10 A I
VeröffentlichungsnummerCN104396041
Land/GebietDeutschland
Prioritätsdatum28 März 2013
PrioritätsnummerWO2013EP56738
PublikationsstatusVeröffentlicht - 4 März 2015
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Externe IDs

ORCID /0000-0002-9773-6676/work/142659831