A crystalline alkylsilane dielectric surface-modification layer: A general strategy for high performance organic thin-film transistors
Publikation: Beitrag in Fachzeitschrift › Konferenzartikel › Beigetragen › Begutachtung
Beitragende
Abstract
It has been well established that in organic thin film transistors (OTFTs), charge transport occurs within the first few monolayers of the semiconductor at the semiconductor/dielectric interface. Understanding and engineering the semiconductor-dielectric is therefore critical. Large discrepancies in performance, even with seemingly identical surface treatments, indicate that additional surface parameters must be identified and controlled in order to optimize OTFTs. Here, we used the Langmuir-Blodgett technique to study the effect of an octadecylsilane dielectric modification layer on OTFT performance. We found a crystalline, dense OTS monolayer promotes two-dimensional growth in a variety of organic semiconductors. Mobilities as high as 5.3 cm2/Vs and 2.2 cm2/Vs were demonstrated on crystalline OTS for C 60 and pentacene, respectively. Finally, we also developed a simple, scalable spin-coating method to produce crystalline OTS. This work represents a significant step towards a general approach for morphological control of organic semiconductors which is directly linked to their thin film transistor performance.
Details
Originalsprache | Englisch |
---|---|
Fachzeitschrift | Proceedings of SPIE - The International Society for Optical Engineering |
Publikationsstatus | Veröffentlicht - 2009 |
Peer-Review-Status | Ja |
Extern publiziert | Ja |
Konferenz
Titel | Organic Field-Effect Transistors VIII |
---|---|
Dauer | 3 - 5 August 2009 |
Stadt | San Diego, CA |
Land | USA/Vereinigte Staaten |
Schlagworte
Forschungsprofillinien der TU Dresden
ASJC Scopus Sachgebiete
Schlagwörter
- Nucleation and growth, Organic semiconductor, Self-assembled monolayer, Structure-property, Transistor