In this paper, we present a compact memristor model for bipolar neuromorphic ReRAM devices. The proposed model focuses on the high level description of the device, and it reproduces some of the most important characteristics (i.e. conductance, energy dissipation) without needing a detailed electrical simulation. Its functionality is shown by using it to model the behavior of three different ReRAM devices that were fabricated and measured at the CNR-IMM, MDM Laboratory. The parameters extraction procedure is also discussed. The obtained results clearly show that the model proposed in this paper is able to capture the influence of the programming pulse parameters (i.e. pulse duration and height) changes. This is accomplished by the introduction of a parameter, which is related to the specific device technology.