A compact, low-power 40 Gbit/s differential laser driver in SiGe BiCMOS technology
Publikation: Beitrag in Buch/Konferenzbericht/Sammelband/Gutachten › Beitrag in Konferenzband › Beigetragen › Begutachtung
Beitragende
Abstract
A differential laser driver for 40 Gbit/s optical communications delivering a 10 mA current swing to a laser modeled as a 50Ω resistance in parallel to a 100 fF capacitance is presented. The circuit employs multiple frequency compensation techniques to achieve very high speed without space-consuming inductors. The driver was implemented in a 180 GHz-fT,max SiGe BiCMOS technology. Measurements showed 15 dB gain with 26 GHz bandwidth and open eyes up to 50 Gbit/s. The driver's power consumption was only 80 mW making it the fastest and most power efficient of all inductor-free 40 Gbit/s SiGe laser drivers published to date.
Details
| Originalsprache | Englisch |
|---|---|
| Titel | European Microwave Week 2009, EuMW 2009 |
| Seiten | 324-326 |
| Seitenumfang | 3 |
| Publikationsstatus | Veröffentlicht - 2009 |
| Peer-Review-Status | Ja |
Konferenz
| Titel | European Microwave Week 2009, EuMW 2009: Science, Progress and Quality at Radiofrequencies - 39th European Microwave Conference, EuMC 2009 |
|---|---|
| Dauer | 28 September - 2 Oktober 2009 |
| Stadt | Rome |
| Land | Italien |
Externe IDs
| Scopus | 72449125095 |
|---|
Schlagworte
ASJC Scopus Sachgebiete
Schlagwörter
- BiCMOS, laser driver, SiGe, high speed data communication, optical communications