In this work, we present a compact memristor model for bipolar neuromorphic ReRAM devices. The proposed model focuses on a behavioural high level description of the device, and it reproduces some of the most important characteristics (i.e. conductance, energy dissipation), using the number of pulses as the input variable instead of any electrical. Its functionality is shown by using it to model the behavior of three different ReRAM devices that were fabricated and measured at the CNR-IMM, Agrate Brianza. Considering a train of identical pulses as an input voltage signal consisting of N pulses and where m is the pulse number. The conductance during depression or potentiation can be described.