A 60-GHz Super-Regenerative Oscillator with 80 dB Gain in SiGe BiCMOS for FMCW Radar Active Reflectors

Publikation: Beitrag in Buch/Konferenzbericht/Sammelband/GutachtenBeitrag in KonferenzbandBeigetragenBegutachtung

Abstract

A super-regenerative oscillator circuit operating in the 60 GHz band is designed and characterized for use as an active reflector tag for civil automotive FMCW radar applications. The circuit is a proof of principle based on the cross-coupled topology with switchable tail current for oscillator quenching. The circuit is fabricated in a 130-nm SiGe BiCMOS technology with fmax of 450 GHz, and occupies a total area of 0.87 mm2. The super-regenerative oscillator circuit achieves a maximum gain of80.5 dB at a dc power dissipation of 25 mW with a measured output power up to 3.1 dBm. It integrates an on-chip load transformation network and a Marchand balun for interfacing with a single-ended 50 Ω load.

Details

OriginalspracheEnglisch
Titel2022 IEEE 22nd Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2022
Herausgeber (Verlag)Institute of Electrical and Electronics Engineers Inc.
Seiten31-34
Seitenumfang4
ISBN (elektronisch)9781665434690
PublikationsstatusVeröffentlicht - 2022
Peer-Review-StatusJa

Publikationsreihe

ReiheTopical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF)
ISSN2475-2983

Konferenz

Titel22nd IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2022
Dauer16 - 19 Januar 2022
StadtLas Vegas
LandUSA/Vereinigte Staaten

Schlagworte

Schlagwörter

  • BiCMOS, cross-coupled oscillators, frequency modulated continuous wave (FMCW) radar, millimeter-wave integrated circuits, super-regenerative receivers