A 60-GHz Super-Regenerative Oscillator with 80 dB Gain in SiGe BiCMOS for FMCW Radar Active Reflectors
Publikation: Beitrag in Buch/Konferenzbericht/Sammelband/Gutachten › Beitrag in Konferenzband › Beigetragen › Begutachtung
Beitragende
Abstract
A super-regenerative oscillator circuit operating in the 60 GHz band is designed and characterized for use as an active reflector tag for civil automotive FMCW radar applications. The circuit is a proof of principle based on the cross-coupled topology with switchable tail current for oscillator quenching. The circuit is fabricated in a 130-nm SiGe BiCMOS technology with fmax of 450 GHz, and occupies a total area of 0.87 mm2. The super-regenerative oscillator circuit achieves a maximum gain of80.5 dB at a dc power dissipation of 25 mW with a measured output power up to 3.1 dBm. It integrates an on-chip load transformation network and a Marchand balun for interfacing with a single-ended 50 Ω load.
Details
Originalsprache | Englisch |
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Titel | 2022 IEEE 22nd Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2022 |
Herausgeber (Verlag) | Institute of Electrical and Electronics Engineers Inc. |
Seiten | 31-34 |
Seitenumfang | 4 |
ISBN (elektronisch) | 9781665434690 |
Publikationsstatus | Veröffentlicht - 2022 |
Peer-Review-Status | Ja |
Publikationsreihe
Reihe | Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF) |
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ISSN | 2475-2983 |
Konferenz
Titel | 22nd IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2022 |
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Dauer | 16 - 19 Januar 2022 |
Stadt | Las Vegas |
Land | USA/Vereinigte Staaten |
Schlagworte
ASJC Scopus Sachgebiete
Schlagwörter
- BiCMOS, cross-coupled oscillators, frequency modulated continuous wave (FMCW) radar, millimeter-wave integrated circuits, super-regenerative receivers