A 50-20 Gb/s, 80 mW Photonic Receiver with 59-70 dBΩ Gain and 12.3-8.2 pA/√Hz Input-Referred Noise

Publikation: Beitrag in FachzeitschriftForschungsartikelBeigetragenBegutachtung

Beitragende

Abstract

This letter presents the design and measurements of a monolithically integrated photonic receiver manufactured in 0.25 μm SiGe BiCMOS electro-photonic technology. The receiver consists of an on-chip germanium photodiode directly connected to the transimpedance amplifier (TIA). An on-chip, low-noise feedback loop compensates the dc photocurrent. The circuit provides a maximum bandwidth of 35.6 GHz at a gain of 59.2 dB ω with a noise of 12.34 pA/Hz while consuming only 80 mW. In combination with a 20 GHz, 1550 nm electro-optical transmitter, a maximum data rate of 50 Gb/s at a bit error rate of less than 10-12 was measured. To the best of the authors' knowledge, this is the fastest error-free detected data rate reported for a monolithically integrated photonic receiver. Additionally, the feedback resistor of the TIA can be tuned via a MOSFET allowing error-free operation at 20 Gb/s with a sensitivity of only -13 dBm. In this setting the input-referred noise is only 8.16 pA/Hz.

Details

OriginalspracheEnglisch
Aufsatznummer9119471
Seiten (von - bis)921-924
Seitenumfang4
FachzeitschriftIEEE Photonics Technology Letters
Jahrgang32
Ausgabenummer15
PublikationsstatusVeröffentlicht - 1 Aug. 2020
Peer-Review-StatusJa

Externe IDs

ORCID /0000-0002-1851-6828/work/142256632

Schlagworte

Forschungsprofillinien der TU Dresden

Schlagwörter

  • EPIC, monolithic integrated circuit, receiver, SiGe, silicon photonics, TIA