A 50-20 Gb/s, 80 mW Photonic Receiver with 59-70 dBΩ Gain and 12.3-8.2 pA/√Hz Input-Referred Noise
Publikation: Beitrag in Fachzeitschrift › Forschungsartikel › Beigetragen › Begutachtung
Beitragende
Abstract
This letter presents the design and measurements of a monolithically integrated photonic receiver manufactured in 0.25 μm SiGe BiCMOS electro-photonic technology. The receiver consists of an on-chip germanium photodiode directly connected to the transimpedance amplifier (TIA). An on-chip, low-noise feedback loop compensates the dc photocurrent. The circuit provides a maximum bandwidth of 35.6 GHz at a gain of 59.2 dB ω with a noise of 12.34 pA/Hz while consuming only 80 mW. In combination with a 20 GHz, 1550 nm electro-optical transmitter, a maximum data rate of 50 Gb/s at a bit error rate of less than 10-12 was measured. To the best of the authors' knowledge, this is the fastest error-free detected data rate reported for a monolithically integrated photonic receiver. Additionally, the feedback resistor of the TIA can be tuned via a MOSFET allowing error-free operation at 20 Gb/s with a sensitivity of only -13 dBm. In this setting the input-referred noise is only 8.16 pA/Hz.
Details
Originalsprache | Englisch |
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Aufsatznummer | 9119471 |
Seiten (von - bis) | 921-924 |
Seitenumfang | 4 |
Fachzeitschrift | IEEE Photonics Technology Letters |
Jahrgang | 32 |
Ausgabenummer | 15 |
Publikationsstatus | Veröffentlicht - 1 Aug. 2020 |
Peer-Review-Status | Ja |
Externe IDs
ORCID | /0000-0002-1851-6828/work/142256632 |
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Schlagworte
Forschungsprofillinien der TU Dresden
ASJC Scopus Sachgebiete
Schlagwörter
- EPIC, monolithic integrated circuit, receiver, SiGe, silicon photonics, TIA