3.93-MHz/328- μw Dynamic Frequency Divider in Flexible a-IGZO TFT Technology

Publikation: Beitrag in FachzeitschriftForschungsartikelBeigetragenBegutachtung

Abstract

The implementation of a dynamic frequency divider in a fully flexible amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistor (TFT) technology on a sub-15 \mu \text{m} polyimide substrate is presented. This frequency divider is regenerative and is also known as a Miller divider. In this letter, it is implemented using only a Gilbert cell with minimum-size LO transistors. Including the bias network, it has only eight transistors. Using a 6-V supply voltage, it operates up to 3.93 MHz, consumes 328 \mu \text{W} , and has a speed over power Figure-of-Merit (FOM) of 12.0 MHz/mW. To the best of our knowledge, this FOM is the highest reported for circuits in this class of flexible TFT technologies.

Details

OriginalspracheEnglisch
Seiten (von - bis)134-137
Seitenumfang4
FachzeitschriftIEEE Solid-State Circuits Letters
Jahrgang3
PublikationsstatusVeröffentlicht - Juli 2020
Peer-Review-StatusJa

Externe IDs

ORCID /0000-0001-6429-0105/work/142236597
ORCID /0000-0002-4152-1203/work/165453361

Schlagworte

Forschungsprofillinien der TU Dresden

ASJC Scopus Sachgebiete

Schlagwörter

  • Dynamic frequency divider, flexible electronics, indium-gallium-zinc-oxide (IGZO), Miller frequency divider, thin-film transistors (TFT)