Temperature‐Dependent Phase Transitions in Hf x Zr 1‐x O 2 Mixed Oxides: Indications of a Proper Ferroelectric Material

Research output: Contribution to journalResearch articleContributedpeer-review

Contributors

  • Uwe Schroeder - , NaMLab - Nanoelectronic materials laboratory gGmbH (Author)
  • Terence Mittmann - , NaMLab - Nanoelectronic materials laboratory gGmbH (Author)
  • Monica Materano - , NaMLab - Nanoelectronic materials laboratory gGmbH (Author)
  • Patrick D. Lomenzo - , NaMLab - Nanoelectronic materials laboratory gGmbH (Author)
  • Patrick Edgington - , North Carolina State University (Author)
  • Young H. Lee - , North Carolina State University (Author)
  • Meshari Alotaibi - , University of Sheffield (Author)
  • Anthony R. West - , University of Sheffield (Author)
  • Thomas Mikolajick - , Chair of Nanoelectronics, NaMLab - Nanoelectronic materials laboratory gGmbH (Author)
  • Alfred Kersch - , Munich University of Applied Sciences (Author)
  • Jacob L. Jones - , North Carolina State University (Author)

Abstract

Knowledge about phase transitions in doped HfO 2 and ZrO 2-based films is crucial for developing future ferroelectric devices. These devices should perform in ambient temperature ranges with no degradation of device performance. Here, the phase transition from the polar orthorhombic to the nonpolar tetragonal phase in thin films is of significant interest. Detailed electrical and structural characterization is performed on 10 nm mixed Hf xZr 1-xO 2 binary oxides with different ZrO 2 in HfO 2 and small changes in oxygen content. Both dopant and oxygen content directly impact the phase transition temperature between the polar and nonpolar phase. A first-order phase transition with thermal hysteresis is observed from the nonpolar to the polar phase with a maximum in the dielectric constant. The observed phase transition temperatures confirm trends as obtained by DFT calculations. Based on the outcome of the measurements, the classification of the ferroelectric material is discussed.

Details

Original languageEnglish
Article number2200265
Number of pages9
JournalAdvanced electronic materials
Volume8
Issue number9
Early online date17 May 2022
Publication statusPublished - Sept 2022
Peer-reviewedYes

External IDs

Scopus 85132249557
Mendeley cf254e7e-9562-39fc-b617-1b7fe718ee92
WOS 000796380100001
unpaywall 10.1002/aelm.202200265

Keywords

DFG Classification of Subject Areas according to Review Boards

Keywords

  • Curie–Weiss law, ferroelectric materials, hafnium oxide, phase transition in doped HfO 2 and ZrO 2, zirconium oxide

Library keywords