Temperature‐Dependent Phase Transitions in Hf x Zr 1‐x O 2 Mixed Oxides: Indications of a Proper Ferroelectric Material

Research output: Contribution to journalResearch articleContributedpeer-review



Knowledge about phase transitions in doped HfO 2 and ZrO 2-based films is crucial for developing future ferroelectric devices. These devices should perform in ambient temperature ranges with no degradation of device performance. Here, the phase transition from the polar orthorhombic to the nonpolar tetragonal phase in thin films is of significant interest. Detailed electrical and structural characterization is performed on 10 nm mixed Hf xZr 1-xO 2 binary oxides with different ZrO 2 in HfO 2 and small changes in oxygen content. Both dopant and oxygen content directly impact the phase transition temperature between the polar and nonpolar phase. A first-order phase transition with thermal hysteresis is observed from the nonpolar to the polar phase with a maximum in the dielectric constant. The observed phase transition temperatures confirm trends as obtained by DFT calculations. Based on the outcome of the measurements, the classification of the ferroelectric material is discussed.


Original languageEnglish
Article number2200265
Number of pages9
JournalAdvanced electronic materials
Issue number9
Publication statusPublished - 17 May 2022

External IDs

Scopus 85132249557
Mendeley cf254e7e-9562-39fc-b617-1b7fe718ee92
WOS 000796380100001
unpaywall 10.1002/aelm.202200265


DFG Classification of Subject Areas according to Review Boards


  • Curie–Weiss law, ferroelectric materials, hafnium oxide, phase transition in doped HfO 2 and ZrO 2, zirconium oxide

Library keywords