SiC-mosfet or Si-IGBT Comparison of design and key characteristics of a 690 V grid-tied industrial two-level voltage source converter

Research output: Contribution to journalResearch articleContributedpeer-review

Contributors

Abstract

In this paper, a design driven comparison between two 190 kVA industrial three-phase two-level voltage source converter (2L-VSC) designs based in silicon carbide (SiC) and silicon (Si) for 690 V grids is presented. These two designs were conceived to have the same nominal power, while switching at reasonable switching speeds and requiring the same case to ambient thermal impedance. Under these conditions, the designs were studied to detect the potential gains and limitations that a pragmatic converter design could feature when using these two technologies regarding cost, efficiency, size and weight. To achieve this, experimentally determined semiconductor characteristics were used to perform simulations, the results of which were then used to design the essential parts of the converter. These designed parts were then corroborated with manufacturers, from which physical characteristics of all designed components were obtained. The results show that the SiC based design presents substantial weight savings and an 11% system cost reduction, while preserving its traditional characteristics such as improved overall efficiency when compared to the silicon based design under the given design requirements and constraints.

Details

Original languageEnglish
Article number3054
JournalEnergies
Volume14
Issue number11
Publication statusPublished - Jun 2021
Peer-reviewedYes

Keywords

Sustainable Development Goals

Keywords

  • 2L-VSC, AFE, Converter assessment, Converter design, Cost assessment, Power density, Si-IGBT, SiC-MOSFET