We measured the I(V) and dV/dI(V) characteristics of TiTe₂-based point contacts (PCs) from room to helium temperatures. Features indicating the emergence of charge density wave (CDW) were detected. They represent symmetrical relatively V = 0 maxima in dV/dI(V) around ±150 mV at liquid helium temperatures, which disappear above 150 K, similar to the case of sister CDW compound TiSe₂. Applying higher voltages above 200 mV, we observed resistive switching in TiTe₂ PCs from a metallic-like low-resistance state to a non-metallic type high-resistance state with a change of resistance by an order of magnitude. A unique diode-like effect was registered in “soft” TiTe₂ PCs with hysteretic I(V) at the negative voltage on TiTe₂. Discovering the resistive switching and diode effect adds TiTe₂ to the transition-metal dichalcogenides, which could be useful in developing non-volatile ReRAM and other upcoming nanotechnologies.