This paper presents a systematic study of the charge transport behavior of heavily doped n-type Ge layers with As and Sb. A nonequilibrium method ion implantation followed by milliseconds flash lamp annealing is applied to synthesize the n⁺⁺ Ge layers (Ge:As and Ge:Sb). The resulting materials contain free electrons with a density above 3 × 10¹⁹ cm⁻³ and mobility more than 220 cm²/(V s). Quantum corrections to the conductance in a magnetic field are observed at low temperatures. Weak localization persists up to 30 K in Ge:Sb, while only up to 10 K in Ge:As. Using the Hikami-Larkin-Nagaoka model to fit the magnetoconductance data, we obtain the phase coherence length l ϕ of the hyperdoped Ge samples in the range of 70-163 nm. This study may pave a way to explore possible applications for quantum technologies utilizing As- and Sb-hyperdoped Ge.