Bipolar electric-field enhanced trapping and detrapping of mobile donors in BiFeO3 memristors

Research output: Contribution to journal › Research article › Contributed › peer-review

Contributors

  • Tiangui You - , Chemnitz University of Technology (Author)
  • Nan Du - , Chemnitz University of Technology (Author)
  • Stefan Slesazeck - , NaMLab - Nanoelectronic materials laboratory gGmbH (Author)
  • Thomas Mikolajick - , Chair of Nanoelectronics, NaMLab - Nanoelectronic materials laboratory gGmbH (Author)
  • Guodong Li - , Leibniz Institute for Solid State and Materials Research Dresden (Author)
  • Danilo Bürger - , Chemnitz University of Technology (Author)
  • Ilona Skorupa - , Helmholtz-Zentrum Dresden-Rossendorf (Author)
  • Hartmut Stöcker - , Freiberg University of Mining and Technology (Author)
  • Barbara Abendroth - , Freiberg University of Mining and Technology (Author)
  • Andreas Beyer - , University of Marburg (Author)
  • Kerstin Volz - , University of Marburg (Author)
  • Oliver G. Schmidt - , Chemnitz University of Technology, Leibniz Institute for Solid State and Materials Research Dresden (Author)
  • Heidemarie Schmidt - , Chemnitz University of Technology (Author)

Abstract

Pulsed laser deposited Au-BFO-Pt/Ti/Sapphire MIM structures offer excellent bipolar resistive switching performance, including electroforming free, long retention time at 358 K, and highly stable endurance. Here we develop a model on modifiable Schottky barrier heights and elucidate the physical origin underlying resistive switching in BiFeO3 memristors containing mobile oxygen vacancies. Increased switching speed is possible by applying a large amplitude writing pulse as the resistive switching is tunable by both the amplitude and length of the writing pulse. The local resistive switching has been investigated by conductive atomic force microscopy and exhibits the capability of down-scaling the resistive switching cell to the grain size. (Graph Presented).

Details

Original languageEnglish
Pages (from-to)19758-19765
Number of pages8
JournalACS Applied Materials and Interfaces
Volume6
Issue number22
Publication statusPublished - 26 Nov 2014
Peer-reviewedYes

External IDs

ORCID /0000-0003-3814-0378/work/142256296

Keywords

ASJC Scopus subject areas

Keywords

  • BiFeO thin films, Bipolar resistive switching, Mobile oxygen vacancy, Modifiable rectification properties, Reliability, Ti diffusion

Library keywords